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Gallium Asenide Substrate Specimen Preparation
(Class 4 Procedures)

Metallographic Class 4 sample preparation


Specimen preparation of extremely friable or brittle materials, such as GaAs, offer a microstructural preparation challenge. Proper microstructural preparation of these materials must minimize fracturing of the GaAs. This is accomplished by first by cutting or sectioning with fine grit / low concentration diamond blades. Oftentimes microelectronic cross sections are not encapsulated and are only mounted using a hot melt tape. If the specimens are encapsulated, a castable mounting compound such as an acrylic or an epoxy is recommended. Grinding and polishing is recommended with diamond lapping films to prevent undue damaging the GaAs substrate. Polishing is accomplished on low napped polishing cloths using hypochlorite and diamond for a CMP polishing operation.

SECTIONING

Diamond Wafering blade -fine grit / low concentration

MOUNTING

Mounting with Hot melt tape or castable mounting with Epoxy or Acrylic resins

POLISHING

Abrasive/surface

Lubricant

Force/ sample

Speed
(Head/base)

Time

15 um Diamond Lapping Film POLYLUBE Diamond Extender 5-10 lbs

100/100 rpm

Until plane
9 um Diamond Lapping Film POLYLUBE Diamond Extender 5-10 lbs

100/100 rpm

2 minutes
6 um Diamond Lapping Film POLYLUBE Diamond Extender 5-10 lbs

100/100 rpm

2 minutes
3 um Diamond Lapping Film POLYLUBE Diamond Extender 5-10 lbs

100/100 rpm

2 minutes

1 um DIAMAT Diamond on Atlantis polishing pad

HOCl- (hypchlorite-bleach)

5-10 lbs

100/100 rpm

1 minute


GaAs microstructure

GaAs, etched with HOCl-, mag. 1000X, DIC

ETCHING

Common Etchants
PACE Technologies Recommended Etchants

PACE Technologies Etchant Database

CAUTION:Safety is very important when etching. Be sure to wear the appropriate protective clothing and observe all WARNINGS on chemical manufacuters SDS (Safety Data Sheets). Also review the COMMENTS and CONDITIONS Section for each etchant.


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email: pace@metallographic.com
www.metallographic.com


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