Skip to main content

Ceramic Matrix Composite (CMC)

Composite

Basic Information

Category: Composite
Material Type: composite
Alternative Names:
CMCSiC/SiCCeramic Composite
Tags:
ceramic-matrix-compositehigh-temperatureaerospace

Composition & Structure

Composition: SiC-30% (30% SiC fibers in SiC matrix)
Microstructure: Silicon carbide matrix with SiC fiber reinforcement

Description

Ceramic matrix composite with excellent high-temperature properties. Used in extreme temperature aerospace and energy applications.

Mechanical Properties

Hardness: 2000 HV
Hardness (HV): 2000 HV
Hardness Category: very hard
Tensile Strength: 300 MPa

Physical Properties

Density: 2.7 g/cm³
Melting Point: 2000 °C

Material Characteristics

Work Hardening: No
Magnetic: No
Corrosion Resistance: excellent

Sectioning

Use abrasive cut-off wheel with adequate coolant flow. Standard cut-off wheel (1.0-1.5 mm thickness) is appropriate. Use adequate coolant flow to prevent overheating. Cutting speed: 200-300 RPM for most cut-off saws. Apply steady, moderate pressure. Avoid forcing the cut which can cause wheel wear and sample damage. Leave adequate allowance (~2-3 mm) for grinding away the heat-affected zone from cutting.

Mounting

Cold mounting with epoxy resin is preferred to avoid heat that could affect the microstructure. Use a low-shrinkage epoxy resin for best edge retention. Ensure complete cure before grinding to prevent edge rounding and maintain sample integrity.

Hot compression mounting is acceptable if the part tolerates ~150-180°C and moderate pressure (2000-3000 psi for phenolic). Use phenolic or epoxy-phenolic resins. Ensure proper cooling under pressure to minimize shrinkage.

Grinding

The very-hardness (2000 HV) of Ceramic Matrix Composite (CMC) requires careful grinding. Use standard SiC grinding papers with adequate water lubrication. Disc speed: 200-300 RPM. Apply light to moderate pressure (30-40 N per 30 mm sample) - the hard material may require longer grinding times. Use sharp, fresh grinding papers to minimize deformation.

Grinding sequence:
  • 120 grit: Remove sectioning damage (40-90 seconds). Use moderate pressure to remove heat-affected zone.
  • 240 grit: Remove previous scratches (40-90 seconds). Ensure complete scratch removal.
  • 320 grit: Remove previous scratches (40-90 seconds). Ensure complete scratch removal.
  • 400 grit: Remove previous scratches (40-90 seconds). Ensure complete scratch removal.
  • 600 grit: Remove previous scratches (40-90 seconds). Ensure complete scratch removal.
Always rotate the specimen holder 90° between steps to ensure complete scratch removal. Use complementary rotation (platen and holder same direction, different speeds) rather than contra-rotation to minimize deformation. Adequate water lubrication is critical - avoid drying during grinding which can cause smearing.
Recommended Sequence:
120 diamond240 diamond320 diamond400 diamond600 diamond

Polishing

The very-hardness requires careful polishing. Use diamond polishing with appropriate polishing pads for each stage. Apply light to moderate pressure throughout to prevent deformation.

Diamond polishing sequence:
  • 6μm diamond: 2-4 minutes on a medium-hard synthetic pad (e.g., TEXPAN) with light to moderate pressure (30-40 N per 30 mm sample). Start with 6μm to minimize damage. The hard material may require longer polishing times.
  • 3μm diamond: 2-4 minutes on a medium-hard synthetic pad (e.g., TEXPAN) with light pressure (25-35 N). Continue removing scratches from previous step.
  • 1μm diamond: 2-3 minutes on a medium-hard synthetic pad with lighter pressure (25-35 N). These pads provide gentle material removal.
  • 0.05μm colloidal silica: 1-2 minutes on a high-napped final polishing pad (e.g., MICROPAD) with very light pressure. This removes any remaining fine scratches and prepares the surface for etching. Monitor for relief - reduce polishing time if excessive relief develops.
Use appropriate polishing lubricants. The very-hard material means polishing times should be sufficient but not excessive - avoid over-polishing which can cause relief and affect grain boundary revelation. Monitor the surface frequently under the microscope to check for smearing or excessive relief.
Recommended Sequence:
6μm diamond3μm diamond1μm diamond0.25μm diamond

Etching

Ceramic Matrix Composite (CMC) responds well to standard etchants for composite materials. The silicon carbide matrix with sic fiber reinforcement will reveal clearly with appropriate etchants. Thermal Etching (Chemical Etching) - Standard etchant for this material:
  • Application: Follow standard procedures for Thermal Etching.
  • Reveals: Grain boundaries and microstructure clearly.
  • Rinse: Immediately with water, then ethanol. Dry with compressed air.
  • Note: Use appropriate safety measures. Consult material-specific guidelines.
Polarized Light (Chemical Etching) - Standard etchant for this material:
  • Application: Follow standard procedures for Polarized Light.
  • Reveals: Grain boundaries and microstructure clearly.
  • Rinse: Immediately with water, then ethanol. Dry with compressed air.
  • Note: Use appropriate safety measures. Consult material-specific guidelines.
Etching Strategy:
  • Start with Thermal Etching for general microstructure examination
  • Always clean and degrease before etching
  • Use short initial etch times (a few seconds), check under the microscope, repeat if needed
  • Check etching progress frequently - over-etching can obscure fine details
Safety: All etchants require proper PPE (gloves, safety glasses, lab coat), proper fume hood, and appropriate safety measures. Handle with care.
Common Etchants:
Thermal EtchingPolarized Light

Heat Treatment

Chemical vapor infiltration or polymer infiltration

No standards information available.

Applications

  • Aerospace
  • Energy
  • High-temperature

Typical Uses

  • Jet engine components
  • Heat exchangers
  • Furnace components