SiSiC ceramics is a machineable ceramic and is thus fairly easy to prepare for microstructural evaluation. The primary concern is to minimize excessive cracking during cutting and initial grinding through the use of the appropriate diamond wafering blade and with semi-fixed abrasives on a metal mesh cloth. Polishing with CMP (chemical mechanical polishing) techniques is also a very effective way to remove surface and subsurface damage to the specimen.
SECTIONING
Diamond Wafering blade - medium grit / low concentration
MOUNTING
Castable Mounting with Epoxy or Acrylic resins
POLISHING
Abrasive/surface |
Lubricant |
Force/ sample |
Time |
| 30 um DIAMAT diamond suspension on CEREMESH Metal Mesh cloth | 5 lbs | Until plane | |
| 6 um DIAMAT diamond on TEXPAN polishing pad | SIAMAT colloidal silica | 10 lbs | 5 minutes |
1 um DIAMAT diamond on GOLDPAD polishing pad |
SIAMAT colloidal silica |
10 lbs |
5 minutes |
SIAMAT Colloidal silca on TEXPAN polishing pad |
|
10 lbs |
5 minutes |
 |
SiSiC ceramic, 400X (DIC) as polished |