Ceramics such as alumina, beryllia (BeO) and aluminum nitride (AlN) are commonly used ceramic substrate materials for metallizing because they provide thermal conductivity and electrical resistivity.

Microstructural cross section preparation of metallized layers are difficult because of edge rounding and phase relief. In order to maintain the integrity of the metallic layers, the specimen must first be sectioned properly to avoid chipping and cracking of the ceramic substrate/metal interface. The use of SIAMAT colloidal silica also provides a chemical mechanical polishing (CMP) action, which is the most effective means for eliminating both surface and subsurface damage.

SECTIONING

Diamond Wafering blade - medium grit / low concentration

MOUNTING

Castable Mounting with Epoxy or Acrylic resins

POLISHING

Abrasive/surface	Lubricant	Force/ sample	Speed (Head/base)	Time	Individual Force mode	Central Force mode
45 um Diamond Lapping Film*	POLYLUBE Diamond Extender	5-10 lbs	100/100 rpm	Until plane
30 um Diamond Lapping Film	POLYLUBE Diamond Extender	5-10 lbs	100/100 rpm	3 minutes
9 um Diamond Lapping Film	POLYLUBE Diamond Extender	5-10 lbs	100/100 rpm	2 minutes
6 um DIAMAT diamond on TEXPAN polishing pad	SIAMAT colloidal silica	5-10 lbs	100/100 rpm	5 minutes
1 um DIAMAT diamond on ATLANTIS polishing pad	SIAMAT colloidal silica	5-10 lbs	100/100 rpm	5 minutes
SIAMAT Colloidal silca on TEXPAN polishing pad		5-10 lbs	100/100 rpm	2 minutes

*Required for central polishing force. Click here for more information on central vs. individual polishing force polishing.

BeO substrate with a nickel, copper coating, 400X (DIC)

Common Etchants

CAUTION:Safety is very important when etching. Be sure to wear the appropriate protective clothing and observe all WARNINGS on chemical manufacuters SDS (Safety Data Sheets). Also review the COMMENTS and CONDITIONS Section for each etchant.

ETCHING

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