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PACE Technologies Metallographic Preparation CLASS Chart icon

Beryllium Oxide Electronic Package
Specimen Preparation (Class 4 Procedures)
Metallographic Class 4 sample preparation  

Ceramics such as alumina, beryllia (BeO) and aluminum nitride (AlN) are commonly used ceramic substrate materials for metallizing because they provide thermal conductivity and electrical resistivity.

Microstructural cross section preparation of metallized layers are difficult because of edge rounding and phase relief. In order to maintain the integrity of the metallic layers, the specimen must first be sectioned properly to avoid chipping and cracking of the ceramic substrate/metal interface. The use of SIAMAT colloidal silica also provides a chemical mechanical polishing (CMP) action, which is the most effective means for eliminating both surface and subsurface damage.

SECTIONING
Diamond Wafering blade - medium grit / low concentration

MOUNTING
Castable Mounting with Epoxy or Acrylic resins

POLISHING
Abrasive/surface Lubricant Force/ sample Speed
(Head/base)
Time Individual
Force mode
Central Force
mode
45 um Diamond Lapping Film*
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm Planar

  Metallographic central polishing force
30 um Diamond Lapping Film*
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm 3 min Metallographic individual polishing force Metallographic central polishing force
9 um Diamond Lapping Film
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm 2 min Metallographic individual polishing force Metallographic central polishing force
6 um DIAMAT diamond
on TEXPAN polishing pad
SIAMAT colloidal silica 5-10 lbs 100/100 rpm 5 min Metallographic individual polishing force Metallographic central polishing force
1 um DIAMAT diamond
on ATLANTIS polishing pad
SIAMAT colloidal silica 5-10 lbs 100/100 rpm 5 min Metallographic individual polishing force Metallographic central polishing force
TEXPAN polishing pad SIAMAT colloidal silica 5 lbs 100/100 rpm 2 min Metallographic individual polishing force Metallographic central polishing force

*Required for central polishing force. Click here for more information on central vs. individual polishing force polishing.

Metallographic micrograph of BeO ceramic package
BeO substrate with a nickel, copper coating, 400X (DIC)

ETCHING

Common Etchants
PACE Technologies Recommended Etchants

PACE Technologies Etchant Database

CAUTION:Safety is very important when etching. Be sure to wear the appropriate protective clothing and observe all WARNINGS on chemical manufacuters SDS (Safety Data Sheets). Also review the COMMENTS and CONDITIONS Section for each etchant.


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