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PACE Technologies Metallographic Preparation CLASS Chart icon

Gallium Asenide Substrate
Specimen Preparation (Class 4 Procedures)
Metallographic Class 4 sample preparation  

Specimen preparation of extremely friable or brittle materials, such as GaAs, offer a microstructural preparation challenge. Proper microstructural preparation of these materials must minimize fracturing of the GaAs. This is accomplished by first by cutting or sectioning with fine grit / low concentration diamond blades. Oftentimes microelectronic cross sections are not encapsulated and are only mounted using a hot melt tape. If the specimens are encapsulated, a castable mounting compound such as an acrylic or an epoxy is recommended. Grinding and polishing is recommended with diamond lapping films to prevent undue damaging the GaAs substrate. Polishing is accomplished on low napped polishing cloths using hypochlorite and diamond for a CMP polishing operation.

SECTIONING
Diamond Wafering blade -fine grit / low concentration

MOUNTING
Mounting with Hot melt tape or castable mounting with Epoxy or Acrylic resins

POLISHING
Abrasive/surface Lubricant Force/ sample Speed
(Head/base)
Time Individual
Force mode
Central Force
mode
30 um Diamond Lapping Film*
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm Planar

  Metallographic central polishing force
15 um Diamond Lapping Film*
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm 3 min Metallographic individual polishing force Metallographic central polishing force
9 um Diamond Lapping Film*
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm 2 min Metallographic individual polishing force Metallographic central polishing force
6 um Diamond Lapping Film*
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm 2 min Metallographic individual polishing force Metallographic central polishing force
3 um Diamond Lapping Film*
POLYLUBE Diamond
Extender
5-10 lbs 100/100 rpm 2 min Metallographic individual polishing force Metallographic central polishing force
1 um DIAMAT diamond
on ATLANTIS polishing pad
HOCl- (hypchlorite-bleach) 5-10 lbs 100/100 rpm 1 min Metallographic individual polishing force Metallographic central polishing force

*Required for central polishing force. Click here for more information on central vs. individual polishing force polishing.

GaAs microstructure
GaAs, etched with HOCl-, mag. 1000X, DIC

ETCHING

Common Etchants
PACE Technologies Recommended Etchants

PACE Technologies Etchant Database

CAUTION:Safety is very important when etching. Be sure to wear the appropriate protective clothing and observe all WARNINGS on chemical manufacuters SDS (Safety Data Sheets). Also review the COMMENTS and CONDITIONS Section for each etchant.


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