Silicon-Silicon Carbide Engineering Ceramic
Specimen Preparation (Class 10 Procedures)
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SiSiC ceramics is a machineable ceramic and is thus fairly easy to prepare for microstructural evaluation. The primary concern is to minimize excessive cracking during cutting and initial grinding through the use of the appropriate diamond wafering blade and with semi-fixed abrasives on a metal mesh cloth. Polishing with CMP (chemical mechanical polishing) techniques is also a very effective way to remove surface and subsurface damage to the specimen.
SECTIONING
Diamond Wafering blade - medium grit / low concentration
MOUNTING
Castable Mounting with Epoxy or Acrylic resins.
POLISHING
| Abrasive/surface | Lubricant | Force/ sample | Speed (Head/base) |
Time | Individual Force mode |
Central Force mode |
|---|---|---|---|---|---|---|
| 70 micron diamond grinding disk* |
Water | 5-10 lbs | 200/200 rpm | Planar |
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| 30 um DIAMAT diamond suspension on CERMESH Metal Mesh cloth |
5-10 lbs | 200/200 rpm | 5 min |  |
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| 6 um DIAMAT diamond on TEXPAN polishing pad |
SIAMAT colloidal silica |
10 lbs | 200/200 rpm | 5 min | |
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| 1 um DIAMAT diamond on GOLDPAD or ATLANTIS polishing pad |
SIAMAT colloidal silica |
10 lbs | 200/200 rpm | 5 min | |
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| SIAMAT Colloidal silca on TEXPAN polishing pad |
10 lbs | 200/200 rpm | 5 min | |
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*Required for central polishing force. Click here for more information on central vs. individual polishing force polishing.
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| SiSiC ceramic, 400X (DIC) as polished |
Common Etchants
CAUTION:Safety is very important when etching. Be sure to wear the appropriate protective clothing and observe all WARNINGS on chemical manufacuters SDS (Safety Data Sheets). Also review the COMMENTS and CONDITIONS Section for each etchant.
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