Silicon Nitride Engineering Ceramic
Specimen Preparation (Class 10 Procedures)
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The key to proper specimen preparation of hard / tough ceramic materials such as silicon nitride (Si3N4) is to grind with a semi-fixed abrasive (polycrystalline diamond on a metal mesh cloth), followed by the use of CMP (chemical mechanical polishing) techniques using colloidal silica.
SECTIONING
Diamond Wafering blade - medium grit / low concentration
MOUNTING
Castable Mounting with Epoxy or Acrylic resins.
POLISHING
| Abrasive/surface | Lubricant | Force/ sample | Speed (Head/base) |
Time | Individual Force mode |
Central Force mode |
|---|---|---|---|---|---|---|
| 70 micron diamond grinding disk* |
Water | 5-10 lbs | 200/200 rpm | Planar |
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| 30 um DIAMAT diamond suspension on CERMESH Metal Mesh cloth |
5-10 lbs | 200/200 rpm | 5 min |  |
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| 6 um DIAMAT diamond on TEXPAN polishing pad |
SIAMAT colloidal silica |
10 lbs | 200/200 rpm | 5 min | |
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| 1 um DIAMAT diamond on GOLDPAD or ATLANTIS polishing pad |
SIAMAT colloidal silica |
10 lbs | 200/200 rpm | 5 min | |
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| SIAMAT Colloidal silca on TEXPAN polishing pad |
10 lbs | 200/200 rpm | 5 min | |
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*Required for central polishing force. Click here for more information on central vs. individual polishing force polishing.
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| Silicon Nitride polished with CMP techniques
400X (DIC) as polished |
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| Silicon Nitride polished by conventional 9,6,3,1,0.25 um diamond steps. Note that the damage is not removed even after long polishing times. 400X (DIC) as polished |
Common Etchants
CAUTION:Safety is very important when etching. Be sure to wear the appropriate protective clothing and observe all WARNINGS on chemical manufacuters SDS (Safety Data Sheets). Also review the COMMENTS and CONDITIONS Section for each etchant.
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